| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea58b920606a7030997261fff7deeb92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-02 |
| filingDate |
2017-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f972e84702769b992aa14d98346d8260
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cc3aa5e9bca9cd0b58f631479bfafed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461da6f0809f9db8de45931f26cfb19a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19436a39ae8da8915a6849c890d67d98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e81e49d50f0ee7300ceca254f239919d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d02b8723a1eefd214ebc76507b2d6d7 |
| publicationDate |
2017-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9793336-B2 |
| titleOfInvention |
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors |
| abstract |
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021255049-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11107878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016284786-A1 |
| priorityDate |
2015-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |