| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_844adf60e60f43284edc96d864a884fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc22e7a2b4e816e2f3a2d732c963624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01da1e2578f4e9a452bf5b397f7ad278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ece3102073adbb1109adb69a9454016 |
| publicationDate |
2017-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9793174-B1 |
| titleOfInvention |
FinFET device on silicon-on-insulator and method of forming the same |
| abstract |
A fin field effect transistor (FinFET) on a silicon-on-insulator and method of forming the same are provided in the present invention. The FinFET includes first fin structure, second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure and exposes a first portion of the first fin structure and a second portion of the second fin structure. The first fin structure has a first height and the second fin structure has a second height different from the first height, and a top surface of the first fin structure and a top surface of the second fin structure are at different levels. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019139814-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791213-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355395-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450555-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022262944-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10236382-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I768371-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10157770-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10950490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018151414-A1 |
| priorityDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |