Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fadcae3196ca725b795713aa49cd9f1 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 |
filingDate |
2014-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd66b25491ef308d1631884f4e963d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09399b7e293f93ef443d281b7cc6e641 |
publicationDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9786677-B1 |
titleOfInvention |
Memory device having memory cells connected in parallel to common source and drain and method of fabrication |
abstract |
A memory device may include a memory unit having multiple channel structures connected to a common source and drain in parallel. The memory unit can include floating gate structures including control gates connected to word lines and charge trap layers to store charge to form tiered floating gate memory cells. In some embodiments, rows and columns of memory units can be connected to form a three dimensional memory device. A method of fabricating a memory unit having tiered channel structures utilizing common source and drain elements and 3D memory device utilizing rows and columns of memory units having multiple channel structures connected to the common source and drain elements in parallel is disclosed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11711928-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251149-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329059-B1 |
priorityDate |
2014-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |