| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2257 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2016-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43cc7ea10631af53a03362f3cbf78e5 |
| publicationDate |
2017-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9786473-B2 |
| titleOfInvention |
Method of processing workpiece |
| abstract |
Provided is a method of processing a wafer, which is performed in a processing container of a plasma processing apparatus. This method is a plasma etching method performed on a porous film formed of SiOCH, and is a method of enabling the suppression of various types of deterioration such as an increase in the dielectric constant of the porous film. The wafer includes the porous film and a mask provided on the porous film. The method includes a process of generating a plasma of a first gas and a plasma of a second gas in the processing container and etching the porous film using the mask. The porous film contains SiOCH, and the first gas contains a fluorocarbon-based gas. The second gas contains GeF 4 gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043637-B2 |
| priorityDate |
2015-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |