Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
filingDate |
2015-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08da4b1e5f68c892cdc012c587f1859d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf9b1c2139f402a9f46eedc59a8c7260 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd8d43362ded6083a0dddb71ec7d6ea7 |
publicationDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9780180-B2 |
titleOfInvention |
Semiconductor device with partially unsilicided source/drain |
abstract |
A transistor includes a substrate and a gate over the substrate. The transistor further includes a source and a drain over the substrate on opposite sides of the gate. The transistor further includes a channel region beneath the gate separating the source from the drain, the channel region having a channel width with respect to a surface of the substrate greater than a width of the gate with respect to the surface of the substrate. The transistor further includes a silicide over a first portion of the drain, wherein a second portion of the drain, closer to the gate than the first portion, is an unsilicided region. |
priorityDate |
2010-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |