| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521 |
| filingDate |
2016-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40081a0713970e8f4cb8b83b2d48a278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b32b8267e9abdabb86f7cd9095a5f34a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69 |
| publicationDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9780100-B1 |
| titleOfInvention |
Vertical floating gate memory with variable channel doping profile |
| abstract |
A method of forming a memory device that includes forming a sacrificial gate on a surface of a first source/drain region, and forming a channel opening through the sacrificial gate. The method may further include forming an epitaxial channel region is formed in the channel opening that is in situ doped to have an opposite conductivity type as the first of the source/drain region. A second source/drain region is formed on a portion of the epitaxial channel region opposite the portion of the epitaxial channel region that the first source/drain region is present on, wherein the second source/drain region has a same conductivity type as the conductivity type of the first source/drain region. A memory gate structure including a floating gate and a control gate is substituted for the sacrificial gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021280605-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11049873-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112713088-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023034575-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11764304-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112713088-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021398994-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404568-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017012126-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10319731-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022108997-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456308-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022109054-A1 |
| priorityDate |
2016-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |