| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 |
| filingDate |
2017-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dc029abe432ac2ada4e6b312fe6243c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec9118dd9fb86726b5f6d89519672c4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0ba6cb71b3b4c435636927f91b12f0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4af6b041042b69065669f059b534bdb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c068fe3b16109e16e5e26925954c6ce8 |
| publicationDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9779998-B2 |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163727-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016027702-A1 |
| priorityDate |
2016-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |