Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-012 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0016 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
filingDate |
2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32f6a67b1b38dc1f49b1b260fd966c31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f08b0ee57da2fc8885f52c176617990e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5573aa3a2480135e204d64d392767ed |
publicationDate |
2017-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9776852-B2 |
titleOfInvention |
Method for controlling surface roughness in MEMS structure |
abstract |
The present disclosure provides a method for manufacturing a CMOS-MEMS structure. The method includes etching a cavity on a first surface of a cap substrate; bonding the first surface of the cap substrate with a sensing substrate; thinning a second surface of the sensing substrate, the second surface being opposite to a third surface of the sensing substrate bonded to the cap substrate; etching the second surface of the sensing substrate; patterning a portion of the second surface of the sensing substrate to form a plurality of bonding regions; depositing an eutectic metal layer on the plurality of bonding regions; etching a portion of the sensing substrate under the cavity to form a movable element; and bonding the sensing substrate to a CMOS substrate through the eutectic metal layer. |
priorityDate |
2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |