| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ab25b307cada42e5d8f8afb672b8c7c3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2016-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b637b6b539a54428babbde37ec2c4a9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d6ea67b057c015acd8ac28f87157264 |
| publicationDate |
2017-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9768165-B2 |
| titleOfInvention |
High isolation switch |
| abstract |
An embodiment integrated circuit includes a switch and a conductive line over the switch. The switch includes a gate, a first source/drain region at a top surface of a semiconductor substrate, and a second source/drain region at the top surface of the semiconductor substrate. The first source/drain region and the second source/drain region are disposed on opposing sides of the gate. At least a portion of the first conductive line is aligned with the gate, and the first conductive line is electrically coupled to ground. |
| priorityDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |