| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb70b1c7b30e4ec8813de502c7db9b2c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-103 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d12e86a8db36dd21dec33ba8293ed1ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e686d492856a5952621614152e3e39d9 |
| publicationDate |
2017-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9761739-B2 |
| titleOfInvention |
High speed photosensitive devices and associated methods |
| abstract |
High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322642-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741399-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10469775-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11226402-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017025456-A1 |
| priorityDate |
2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |