| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate |
2015-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1b4773d6ab4d9cc5b2a72c6f0d30979
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca80143e10a57ef6b563246497d4a204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6890b8b3c1d94344c032aa486c97658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b1039a3c5c1406c27e965820f3f5e79 |
| publicationDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9755140-B2 |
| titleOfInvention |
Multilayered magnetic thin film stack and nonvolatile memory device having the same |
| abstract |
A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879313-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349066-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017221509-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11417379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I768638-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037587-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411170-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10991761-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10026427-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545617-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110618151-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022085276-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10586561-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10490736-B2 |
| priorityDate |
2014-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |