| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dfb48de5a032eccffde44a509004c3dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_13df093a57439361f9c81cfbd47e73c8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P20-135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P20-133 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25B1-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f00ba2419f5e823e1a96e3ed250e7cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ac12fcb00d1ec6c252b7a73b911537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f2a10f2507dd153fd63370208051972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4bd6e4e11f0e36a3640f868372c25b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18bf8112e306f677337f538c4adfefae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8161ee18ada8fa6966bc43572c1545f |
| publicationDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9755023-B2 |
| titleOfInvention |
Photoelectrochemical cell including Ga(Sbx)N1-x semiconductor electrode |
| abstract |
The composition of matter comprising Ga(Sb x )N 1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device. |
| priorityDate |
2011-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |