Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d0693ed4f2b7b1fab97515ac2f1f311c |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0742 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-128 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-0009 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
filingDate |
2017-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be85357589be37ce26ff962053097e9c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85f2a958336e90697f07f0cf925ea683 |
publicationDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9746437-B1 |
titleOfInvention |
Cmos-based process for manufacturing a semiconductor gas sensor |
abstract |
A CMOS-based process for manufacturing a semiconductor gas sensor includes the steps of: I) providing a semi-product, II) etching a substrate to remove a portion of the substrate and a portion of a first insulation layer so as to form a gas-sensing cavity, thereby to expose at least one sensing electrode; and III) depositing a gas-sensitive layer to cover the at least one sensing electrode. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11674916-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018164246-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10852271-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020099185-A1 |
priorityDate |
2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |