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filingDate 2017-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9746437-B1
titleOfInvention Cmos-based process for manufacturing a semiconductor gas sensor
abstract A CMOS-based process for manufacturing a semiconductor gas sensor includes the steps of: I) providing a semi-product, II) etching a substrate to remove a portion of the substrate and a portion of a first insulation layer so as to form a gas-sensing cavity, thereby to expose at least one sensing electrode; and III) depositing a gas-sensitive layer to cover the at least one sensing electrode.
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