| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d48a21f98028f3a383735a652a6287b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4b7f2c687dbc7d9f87a4fc4fe9abafc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
| filingDate |
2012-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9380963d2067c4b4a0193bda0e2c350c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e65838303e102a735cd6aa524d0676 |
| publicationDate |
2017-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9741913-B2 |
| titleOfInvention |
Light-emitting diode and method of manufacturing same |
| abstract |
Provided are a light-emitting diode which prevents degradation of reflectance and which enables high-luminosity light emission, and its manufacturing method. Such a light-emitting diode includes a substrate ( 1 ) upon which are provided, in this order, a reflecting layer ( 6 ), a transparent film ( 8 ) wherein multiple ohmic contact electrodes ( 7 ) are embedded at intervals, and a compound semiconductor layer ( 10 ) including a current diffusion layer ( 25 ) and a light-emitting layer ( 24 ) in this order. The periphery of the surface of each ohmic contact electrode ( 7 ) on the substrate ( 1 ) side are covered by the transparent film ( 8 ), and the ohmic contact electrodes ( 7 ) contact the reflecting layer ( 6 ) and the current diffusion layer ( 25 ). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11114588-B2 |
| priorityDate |
2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |