Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8941b9fa39b55eefcb54dc8b3e875a60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d852f2e8afb8145fd3b86308e106a00c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca57eabf3ff4673e71c2d52c33eaf65d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8b575edc3fd249831e16021d7a90bcb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_899644a05f72901f0fba78f70fc59990 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d4c44e47840eeee40703d21bfa56471 |
publicationDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9735231-B2 |
titleOfInvention |
Block layer in the metal gate of MOS devices |
abstract |
A method includes method includes forming a dummy gate stack over a semiconductor substrate, wherein the semiconductor substrate is comprised in a wafer, removing the dummy gate stack to form a recess, forming a gate dielectric layer in the recess, and forming a metal layer in the recess and over the gate dielectric layer. The metal layer has an n-work function. A block layer is deposited over the metal layer using Atomic Layer Deposition (ALD). The remaining portion of the recess is filled with metallic materials, wherein the metallic materials are overlying the metal layer. |
priorityDate |
2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |