| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_459ed213007307f4e4bee9a68a346ca7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-094 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-2047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L41-0973 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 |
| filingDate |
2016-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3edb1966c8c1cb0bbf0193ae563639b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f408088635cedfe362cca20c6ba17ae2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56bf94606621a1ab38b521423b1f4779 |
| publicationDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9731962-B2 |
| titleOfInvention |
MEMS device and fabrication method |
| abstract |
MEMS devices and methods for forming the same are provided. A first metal interconnect structure is formed on a first semiconductor substrate to connect to a CMOS control circuit in the first semiconductor substrate. A bonding layer having a cavity is formed on the first metal interconnect structure, and then bonded with a second semiconductor substrate. A conductive plug passes through a first region of the second semiconductor substrate, through the bonding layer, and on the first metal interconnect structure. A second metal interconnect structure includes a first end formed on the first region of the second semiconductor substrate, and a second end connected to the conductive plug. Through-holes are disposed through a second region of the second semiconductor substrate and through a top portion of the bonded layer that is on the cavity to leave a movable electrode to form the MEMS device. |
| priorityDate |
2013-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |