| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2016-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c74c01f1c9e5b91f6ad7a5c88c5e193f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e9ebf74d8f8dfbd48f64728879e6f68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09d8902a049a7b663815553bff649aa5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aa110cf9d873918fa69889b21d1cbf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21e702804a204cb9735c853d0384e854 |
| publicationDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9716091-B2 |
| titleOfInvention |
Fin field effect transistor |
| abstract |
A fin field effect transistor (FinFET) including a first insulation region and a second insulation region and fin there between. A gate stack is disposed over a first portion of the fin. A strained source/drain material is disposed over a second portion of the fin. The strained source/drain material has a flat top surface extending over the first and second insulation regions. The first insulation region may include a tapered top surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017005188-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017005180-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170608-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170609-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535529-B2 |
| priorityDate |
2010-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |