| abstract |
A semiconductor device ( 1001 ) includes a thin-film transistor ( 103 ) including a gate electrode ( 3 a ), source and drain electrodes ( 13 as, 13 ad ), and an oxide semiconductor layer ( 7 ), and a source bus line ( 13 s ). The source electrode, the source bus line and the drain electrode include a first metallic element and the oxide semiconductor layer includes a second metallic element. When viewed along a normal to its substrate, at least respective portions of the source electrode, the source bus line, and the drain electrode overlap with the oxide semiconductor layer. A low reflecting layer ( 4 s, 4 d ) which includes the first and second metallic elements and which has a lower reflectance to visible radiation than the source electrode has been formed between the source electrode and the oxide semiconductor layer, between the source bus line and the oxide semiconductor layer, and between the drain line and the oxide semiconductor layer. |