| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97fdcd07cb106438bda72fc4c4cbdf2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_506a5da6b4c86b75f922cd990b9dee42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3aeb5f10fc31c69d2a550aaa09d4866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edeac3cc314f1d38cdb5e6cc64c06d65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccf414b8979ebb80c675f6c97d9a08b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b3a4f048809c5ec06fa389cbb36c48f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df6e08b2977d67ee0bb1dca2879d3554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caab8ccb770249c3ffe5bfd7eb03dd5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_935e12dedb1aa470144543a13290f865 |
| publicationDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9711507-B1 |
| titleOfInvention |
Separate N and P fin etching for reduced CMOS device leakage |
| abstract |
A method for forming a semiconductor device includes blocking a first region of a wafer and forming a plurality of fins in a second region of the wafer. A protective conformal mask layer is deposited over the plurality of fins in the second region, the second region is blocked, and a plurality of fins are formed in the first region of the wafer using a variety of wet and/or dry etching procedures. The protective conformal mask layer protects the plurality of fins in the second region from the variety of wet and/or dry etching procedures that are used to form the plurality of fins in the first region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015340296-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121711-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229910-B2 |
| priorityDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |