| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_06c87200cf96acdabeae38cd1101927d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-3808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-474
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-4018 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_426c86c60aa492e3b99db6d5712de70d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47f09a6e5e4440c146a398c4cae56208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cecf8f31f0da4d2b7eaa0f118ee0834 |
| publicationDate |
2017-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9701698-B2 |
| titleOfInvention |
Self-assembled monolayers of phosphonic acids as dielectric surfaces for high-performance organic thin film transistors |
| abstract |
Cycloalkylalkylphosphonic acids are presented that are useful for forming a self-assembled monolayer (SAM) on a surface of a metal oxide layer. The combined SAM and metal oxide layer form the dielectric layer of an organic thin film transistor (OTFT). The OTFT can be formed with p-type and n-type organic semiconductor layers on the SAM. The OTFT display superior field effect mobilities and air stabilities to other SAMs and the SAMS of cycloalkylalkylphosphonic acids allow deposition of the organic semiconductors by either vapor deposition or solution processing techniques. |
| priorityDate |
2014-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |