| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate |
2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77d50d5f23414f396d77c5d63afc605e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_717ee75d920d2a0abbce6e0685004c9e |
| publicationDate |
2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9698297-B2 |
| titleOfInvention |
Light-receiving device and method for producing the same |
| abstract |
A method produces a light-receiving device by growing a light-receiving layer having an undoped multi-quantum well structure; growing a cap layer on the light-receiving layer while the cap layer is doped with a p-type impurity during its growth; growing a mesa structure; growing a protective film on surfaces of the mesa structure; and annealing to form a p-n junction. The mesa structure is defined by a surrounding trench. Alternatively, a selective growth mask can be formed on the light-receiving layer whereafter the cap layer is grown on the light-receiving layer by use of the mask. In the alternative, the p-n junction is formed by diffusing p-type impurity from a p-type contact layer of the cap layer through a concentration adjusting layer thereof to the light-receiving layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-D884660-S
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-D884659-S |
| priorityDate |
2013-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |