| abstract |
A microelectronic assembly includes a dielectric element having bumps projecting from a first surface thereof, the bumps having end surfaces flush with a planarized encapsulation. A circuit structure having a thickness less than or equal to 10 microns, formed by depositing two or more dielectric layers and conductive layers on the respective dielectric layers, has electrically conductive features thereon which electrically contact the bumps. The circuit structure can be formed separately on a carrier and then joined with the bumps on the dielectric element, or the circuit structure can be formed by a build up process on the planarized surface of the encapsulation and the planarized surfaces of the bumps. |