| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-33 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-3435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-60 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-50 |
| filingDate |
2013-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f7279171ad82bd5bd536eec5c5f9ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34c21a8861c45dbe7c96760158af6a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d104fd2245bdf5654068f4517465a2f7 |
| publicationDate |
2017-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9664997-B2 |
| titleOfInvention |
Method of manufacturing mask blank and method of manufacturing transfer mask |
| abstract |
Methods of manufacturing a mask blank and a transfer mask that reduce internal stress of a thin film. The methods include preparing a transparent substrate having a pair of opposing main surfaces and composed of a glass material having a hydrogen content of less than 7.4×1018 molecules/cm3, forming a thin film composed of a material containing silicon or metal on one of the main surfaces of the transparent substrate, and carrying out heating treatment or photo irradiation treatment on the transparent substrate with the thin film. The absolute value of a variation of flatness in a predetermined region, as calculated based on a difference in shape obtained from a shape of a main surface of the transparent substrate prior to forming the thin film and a shape of a main surface of the substrate exposed after removing the thin film, is not more than 100 nm. |
| priorityDate |
2012-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |