| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0346
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02375
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-02331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3114 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31 |
| filingDate |
2015-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9eccdfb523c0652937b5d13a94e43cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_465309b7bc499fe1b9dbe55501293171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e50ae961cd300da4641081de81a60af9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c7e21351e98fe3d6baaa0e822116759
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cbd8fa2dd2421bafe54feaedba24ef8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55f458d34199152a5f7337399f9f5b0e |
| publicationDate |
2017-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9659890-B2 |
| titleOfInvention |
Methods and apparatus of packaging semiconductor devices |
| abstract |
Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface. |
| priorityDate |
2011-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |