| abstract |
A semiconductor apparatus ( 10 ) includes: a layered structure ( 100 ) that includes double junction structures that have a first junction ( 151, 153 ) where a wide-bandgap layer ( 102, 104 ) and a narrow-bandgap layer ( 101, 103, 105 ) are layered on each other and a second junction ( 152, 154 ) where a narrow-bandgap layer ( 101, 103, 105 ) and a wide-bandgap layer ( 102, 104 ) are layered on each other, and electrode semiconductor layers ( 110, 120 ) are joined to each layer of the layered structure. Each double junction structure includes a pair of a first region ( 131, 133 ) that has negative fixed charge and a second region ( 132, 134 ) that has positive fixed charge. The first region is closer to the first junction than to a center of the wide-bandgap layer. The second region is closer to the second junction than to the center of the wide-bandgap layer. A 2DEG or a 2DHG is formed at each junction. The semiconductor apparatus functions as an electric energy storage device such as a capacitor. |