| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2014-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06b7f2662b027ba9f4ebfab59a0faa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1d3f0fd551290481f69d3ae06d1d30a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9d05057538411950dc5ba7f083fd9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99c26c01898ebad3790bcc5b1a8b6e05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e98056b91ccc5cc776f5bfa0dbe6971 |
| publicationDate |
2017-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9653477-B2 |
| titleOfInvention |
Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming |
| abstract |
Various embodiments include field effect transistors (FETs) and methods of forming such FETs. One method includes: forming a first set of openings in a precursor structure having: a silicon substrate having a crystal direction, the silicon substrate substantially abutted by a first oxide; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer; and a sacrificial layer overlying the second oxide, wherein the first set of openings each expose the silicon substrate; undercut etching the silicon substrate in a direction perpendicular to the crystal direction of the silicon substrate to form a trench corresponding with each of the first set of openings; passivating exposed surfaces of at least one of the SiGe layer or the silicon layer in the first set of openings; and at least partially filling each trench with a dielectric. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312258-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935126-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017358619-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016322386-A1 |
| priorityDate |
2014-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |