| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99c26c01898ebad3790bcc5b1a8b6e05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9d05057538411950dc5ba7f083fd9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e98056b91ccc5cc776f5bfa0dbe6971
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1d3f0fd551290481f69d3ae06d1d30a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a06b7f2662b027ba9f4ebfab59a0faa0 |
| publicationDate |
2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9646993-B2 |
| titleOfInvention |
Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming |
| abstract |
Various embodiments include field effect transistors (FETs) and related integrated circuit (IC) layouts. One FET includes: a silicon substrate including a set of trenches; a first oxide abutting the silicon substrate; a silicon germanium (SiGe) layer overlying the silicon substrate; a silicon layer overlying the SiGe layer; a second oxide overlying the silicon layer, wherein the silicon layer includes a plurality of salicide regions; a gate structure overlying the second oxide between adjacent salicide regions; and a first contact contacting the gate structure; a second contact contacting one of the salicide regions; a third oxide partially filling the set of trenches and extending above the silicon layer overlying the SiGe layer; and an air gap in each of the set of trenches, the air gap surrounded by the third oxide. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023273369-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163955-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11393915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017358619-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553675-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018108675-A1 |
| priorityDate |
2014-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |