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filingDate 2015-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9646891-B2
titleOfInvention Metal-oxide semiconductor field effect transistor, method of fabricating the same, and semiconductor apparatus including the same
abstract Example embodiments relate to a metal-oxide semiconductor field effect transistor (MOSFET) of a high performance operating with a necessary threshold voltage while including a channel region formed based on a group III-V compound, and a method of manufacturing the MOSFET. The MOSFET includes a substrate, a semiconductor layer including a group III-V compound on the substrate, and a gate structure disposed on the semiconductor layer, and including a gate electrode formed based on metal and undergone an ion implantation process.
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