Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2016-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_187eaa502e4d2780f24df2d238cb1df2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d255f880b216f06936abad4ef30b51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb89d5e2d1cbc7cb60855ce53480a740 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32851973f943bf24ed4cf9a315f064e4 |
publicationDate |
2017-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9634117-B2 |
titleOfInvention |
Self-aligned contact process enabled by low temperature |
abstract |
Self-aligned contacts of a semiconductor device are fabricated by forming a metal gate structure on a portion of a semiconductor layer of a substrate. The metal gate structure contacts inner sidewalls of a gate spacer. A second sacrificial epitaxial layer is formed on a first sacrificial epitaxial layer. The first sacrificial epitaxial layer is adjacent to the gate spacer and is formed on source/drain regions of the semiconductor layer. The first and second sacrificial epitaxial layers are recessed. The recessing exposes at least a portion of the source/drain regions. A first dielectric layer is formed on the exposed portions of the source/drain regions, and over the gate spacer and metal gate structure. At least one cavity within the first dielectric layer is formed above at least one of the exposed portions of source/drain regions. At least one metal contact is formed within the at least one cavity. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566454-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763338-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019067436-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017141038-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10037944-B2 |
priorityDate |
2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |