| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0120933550ea729b9f3186c3772531b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2068 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate |
2016-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f56a4e57f9989b2caa0d4396b939142
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_598d725f5d38dd2ef7f9d6b8ded65098 |
| publicationDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9627849-B2 |
| titleOfInvention |
Semiconductor light device and manufacturing method for the same |
| abstract |
Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region. |
| priorityDate |
2011-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |