Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a4ba732e996ccb96709867320c92feb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
filingDate |
2016-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1c9779fdad2e5081f9fe62b6da18763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3372aa4a79ac1b04e4f139ba3135d92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e179a82217f2280dbec027fcfcb61da |
publicationDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9627336-B2 |
titleOfInvention |
Semiconductor device allowing metal layer routing formed directly under metal pad |
abstract |
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing and a second specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing and the second specific metal layer routing are formed in a second metal layer of the semiconductor device, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad. |
priorityDate |
2013-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |