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filingDate 2015-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9627262-B2
titleOfInvention Method of patterning features of a semiconductor device
abstract A method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.
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