| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate |
2015-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b163bf3e905959ba6cde340f7e19380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc01d341f5adf66b1206a4565f6853e |
| publicationDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9607905-B2 |
| titleOfInvention |
Method of measuring breakdown voltage of semiconductor element and method of manufacturing semiconductor element |
| abstract |
A method of measuring a breakdown voltage of a semiconductor element includes the steps below. A wafer provided with a plurality of semiconductor elements each having an electrode is prepared. The wafer is divided into a plurality of chips provided with at least one semiconductor element. After the step of division into the plurality of chips, a breakdown voltage of the semiconductor element is measured while a probe is in contact with the electrode of the semiconductor element in an insulating liquid. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10403554-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017162458-A1 |
| priorityDate |
2014-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |