Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_459ed213007307f4e4bee9a68a346ca7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
filingDate |
2015-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_264eed9c6a49e0f7b2432ff10bd69229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5ed8b094dde9b586e69b39b73232693 |
publicationDate |
2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9607895-B2 |
titleOfInvention |
Silicon via with amorphous silicon layer and fabrication method thereof |
abstract |
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having an upper surface and a bottom surface; and forming a deep hole in the substrate from the upper surface. The method also includes forming an amorphous silicon layer on a side surface and a bottom surface of the deep hole to promote a preferred crystal orientation in subsequently formed layers. Further, the method includes forming a barrier layer having a preferred orientation along the (111) crystal face on the barrier layer. Further, the method also includes forming a metal layer having a preferred orientation along the (111) crystal face on the barrier layer to fill the through hole. |
priorityDate |
2014-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |