http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601404-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-34 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2014-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bd751a292d32f941868da6a19e994dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bc57eaacc469621e25f330dfb1b89b6 |
publicationDate | 2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-9601404-B2 |
titleOfInvention | Thermal resistance measuring method and thermal resistance measuring device |
abstract | A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat. |
priorityDate | 2013-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.