| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5f69c3f59b08f18c724a24f7736558 |
| publicationDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9595595-B2 |
| titleOfInvention |
Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs |
| abstract |
A method of forming field effect transistors (FETs) and on Integrated Circuit (IC) chips with the FETs. Channel placeholders at FET locations are undercut at each end of FET channels. Source/drain regions adjacent to each channel placeholder extend into and fill the undercut. The channel placeholder is opened to expose channel surface under each channel placeholder. Source/drain extensions are formed under each channel placeholder, adjacent to each source/drain region. After removing the channel placeholders metal gates are formed over each said FET channel. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799569-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020185516-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017117189-A1 |
| priorityDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |