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filingDate 2015-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9b3dd0443ec614eebf5f426ce2dbc0a
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publicationDate 2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9589787-B2
titleOfInvention Manufacturing method of semiconductor device
abstract The present invention makes it possible to increase the reliability of a semiconductor device. A manufacturing method of a semiconductor device according to the present invention includes a step of removing a patterned resist film and the step of removing a patterned resist film includes the steps of: (A) introducing at least a gas containing oxygen into a processing room; (B) starting electric discharge for transforming the gas containing oxygen into plasma; and (C) introducing a water vapor or an alcohol vapor into the processing room. On this occasion, the step (C) is applied either simultaneously with or after the step (B).
priorityDate 2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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