| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_365ac307f871f5b902e62a4f1cae9da6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d5fe2035eaf093e5edbd9fdcb34221b |
| publicationDate |
2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9583703-B2 |
| titleOfInvention |
Tunable variable resistance memory device |
| abstract |
A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651375-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015214477-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935264-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021358533-A1 |
| priorityDate |
2015-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |