| abstract |
A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO (1-x) N x (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W. |