| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07ac7cabafd5056a7babb8fc79df5fcf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce43afad60ba12c0ab65a161bf03a5c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16d3cd6547f8c62580a12b8a21ba95af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3020484d96425b018ea1da49e724aa2 |
| publicationDate |
2017-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9570344-B2 |
| titleOfInvention |
Method to protect MOL metallization from hardmask strip process |
| abstract |
A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation. |
| priorityDate |
2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |