| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3065b80e63d65d018df7ae013342c833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_492f481374acb3d9f4e68144c3fc6d7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7f13648bdfc2e0e99dadfe0d739342a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3df89a5879a0e76de17ccd2055dc1c3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157c224cd4de44262e241232b7719ef4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baf30626b5d8270c8c43484f69f6d0ef |
| publicationDate |
2017-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9559009-B2 |
| titleOfInvention |
Gate structure cut after formation of epitaxial active regions |
| abstract |
A gate structure straddling a plurality of semiconductor material portions is formed. Source regions and drain regions are formed in the plurality of semiconductor material portions, and a gate spacer laterally surrounding the gate structure is formed. Epitaxial active regions are formed from the source and drain regions by a selective epitaxy process. The assembly of the gate structure and the gate spacer is cut into multiple portions employing a cut mask and an etch to form multiple gate assemblies. Each gate assembly includes a gate structure portion and two disjoined gate spacer portions laterally spaced by the gate structure portion. Portions of the epitaxial active regions can be removed from around sidewalls of the gate spacers to prevent electrical shorts among the epitaxial active regions. A dielectric spacer or a dielectric liner may be employed to limit areas in which metal semiconductor alloys are formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017140994-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11335679-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728342-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714599-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195833-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10008415-B2 |
| priorityDate |
2014-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |