| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf83328d853bc7476ca10212837b3a01 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0771
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00 |
| filingDate |
2015-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a773d99f9709b8424db33aac63d96a27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7be9e7ba814d3ef7f663a496f2eca373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_604be83bbc162d216d5098ac7717d19f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddcb6832d2a19b56effb99a1f775c97b |
| publicationDate |
2017-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9546090-B1 |
| titleOfInvention |
Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices |
| abstract |
Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109712959-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256197-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022232533-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017104540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10513429-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10062836-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018029882-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022179479-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10189705-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10429453-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109712959-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3772749-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11078074-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017269169-A1 |
| priorityDate |
2015-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |