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filingDate 2015-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9543475-B2
titleOfInvention Light emitting device and method of manufacturing the same
abstract A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits. The light-emitting device further includes a layer-quality improvement layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and having a plurality of V-pits with substantially same size and shape as the plurality of V-pits of the active layer, wherein layer-quality improvement layer is a group III-V semiconductor layer including Al or In. Due to the improved layer quality, the luminescent quality of the light-emitting device is improved.
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