| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d4429f2b831529723027dae8093b0559 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J2003-2873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-274 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-9501
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N21-6489
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01J3-4406 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J3-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J3-44 |
| filingDate |
2015-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_910dcf6aa239af115c9cbd349e5cde5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5878f7f81ba51c480839e89f8735ee0a |
| publicationDate |
2017-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9541452-B2 |
| titleOfInvention |
Calibration curve formation method, impurity concentration measurement method, and semiconductor wafer manufacturing method |
| abstract |
According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11205599-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11047800-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018277450-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10330599-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10643908-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10935510-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019162668-A1 |
| priorityDate |
2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |