| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8bb56f14bf79a6b6230c956bec19be25 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00250d714d7bac80776540ff4169145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceff182dbb73d261cce2199f96bd8cd2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d621623d5ab3f92def41afd75d1f9a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96cb878e8a0fc163825d49efd050db00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0cb4562b55c8e0befdc79b36d7069e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86e1ef41f7d66f169d9399d5b9a4150 |
| publicationDate |
2017-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9537037-B2 |
| titleOfInvention |
Wet etching method for an N-type bifacial cell |
| abstract |
A wet etching method for an N-type bifacial cell including: (1) providing an N-type silicon wafer, proceeding with surface structuralization on the N-type silicon wafer, and producing a PN junction on a surface of the N-type silicon wafer by using a boron diffusion technique; (2) proceeding with a first mixed acid washing, etching the PN junction on an edge and a back surface of the N-type silicon wafer; (3) proceeding with a first pure water washing and a first alkaline washing, removing residual acid solution from the surface of the N-type silicon wafer; (4) proceeding with a second pure water washing and a second mixed acid washing, removing residual impurities from the surface of the N-type silicon wafer; (5) proceeding with a third pure water washing and air drying; and (6) after air drying, completing etching on the N-type bifacial cell. |
| priorityDate |
2014-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |