| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_de06e557119865bbb139cfacd6345625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-92 |
| filingDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad040321060bf40271efacd6b260a4b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6fe16038d65950ed4f7328d124bd7a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdb3e4aa33688611bdb71757465e5b2a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f279f77cbae495b746fab917b90548f5 |
| publicationDate |
2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9530833-B2 |
| titleOfInvention |
Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof |
| abstract |
An illustrative method disclosed herein includes providing a semiconductor structure. The semiconductor structure includes a first interlayer dielectric provided over a semiconductor substrate. A first electrode of a first capacitor is formed over the first interlayer dielectric. A layer of first dielectric material is deposited over the first electrode of the first capacitor and the first interlayer dielectric. A layer of electrically conductive material is deposited over the layer of first dielectric material. A second electrode of the first capacitor and a first electrode of the second capacitor are formed from the layer of electrically conductive material. After the formation of the second electrode of the first capacitor and the first electrode of the second capacitor, a layer of second dielectric material is deposited and a second electrode of the second capacitor is formed over the layer of second dielectric material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380615-B2 |
| priorityDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |