| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14627 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2014-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_845c32a806fdb189c62ec91df3a2f21f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e957d2f0cdcae5d6ef598442219571b9 |
| publicationDate |
2016-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9530664-B2 |
| titleOfInvention |
Method for manufacturing electronic device by forming a hole in a multilayer insulator film by plasma etching |
| abstract |
A method includes the stage of partially removing a first insulator layer to form an opening passing through the first insulator layer by plasma etching using a gas of a first type, and the stage of partially removing a second insulator layer to form an opening passing through the second insulator layer by plasma etching using a gas of a second type. The gas of a first type contains a first component capable of etching the first insulator layer, and a gas of the second type contains a second component different from the first component, capable of etching the second insulator layer and a third component having a higher deposition ability than the second component. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11686688-B2 |
| priorityDate |
2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |