| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b66f76dd3ba35f7804539a9ecc0d7071 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1104
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535 |
| filingDate |
2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04c2bfd10e45036ad8d70387231701e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac29a5560d5eb2d7762fe367b4a77a2c |
| publicationDate |
2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9520501-B2 |
| titleOfInvention |
Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication |
| abstract |
The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as STI-wall as isolating substrate) having the body connection to bulk semiconductor wafer on the bottom side, isolation on the top side, and the channel, gate dielectric, and gate electrode on opposite to STI side surface. The body is made self-aligned to STI hard mask edge allowing tight control of body thickness. Source and Drain are made by etching holes vertically in STI at STI side of the body and filling with high doped crystalline or poly-Si appropriately doped with any appropriate silicides/metal contacts or with Schottky barrier Source/Drain. Gate first or Gate last approaches can be implemented. Many devices can be fabricated in single active area with body isolation between the devices by iso-plugs combined with gate electrode isolation by iso-trenches. The body can be made as an isolated nano-plate or set nano-wire MOSFET's on the STI wall to form VSTB SOI devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11586901-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453856-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9935100-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11043598-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11411048-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692808-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10860923-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692985-B2 |
| priorityDate |
2012-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |