| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-036 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 |
| filingDate |
2015-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55c3665bd652f150280b35ae8b215f46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75e262f620203199c381028cbb6df18a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cd34472c6e1b6669f04772f8ed0e0c2 |
| publicationDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9484489-B2 |
| titleOfInvention |
Engineered band gaps |
| abstract |
An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11401467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9808782-B2 |
| priorityDate |
2014-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |