http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9484426-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5b448dafe1a9e12b08c60d80e2dfeda |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 |
| filingDate | 2016-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8451d793d19b2e4fbff69c9e3f08b619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e1797a88470a7f8bd039ad04c341998 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c6e6e8293d10c2b6f91e476e2a4dffe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51703171e8b6e99143bd174afd342499 |
| publicationDate | 2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9484426-B2 |
| titleOfInvention | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers |
| abstract | Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal—group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor. |
| priorityDate | 2011-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.